Infineon Technologies - AUIRGP4062D1-E

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AUIRGP4062D1-E by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number AUIRGP4062D1-E
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 217 W; Maximum Collector Current (IC): 55 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Rise Time (tr): 41 ns;
Datasheet AUIRGP4062D1-E Datasheet
In Stock865
NAME DESCRIPTION
Maximum Collector Current (IC): 55 A
Maximum Power Dissipation (Abs): 217 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Rise Time (tr): 41 ns
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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