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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | BF2030WE6327 |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Additional Features: LOW NOISE; Minimum Power Gain (Gp): 20 dB; |
Datasheet | BF2030WE6327 Datasheet |
In Stock | 1,427 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | AMPLIFIER |
Maximum Drain Current (ID): | .04 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
No. of Terminals: | 4 |
Maximum Power Dissipation (Abs): | .2 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | DUAL GATE, DEPLETION MODE |
Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | SOURCE |
Moisture Sensitivity Level (MSL): | 1 |
Minimum Power Gain (Gp): | 20 dB |
Polarity or Channel Type: | N-CHANNEL |
Minimum DS Breakdown Voltage: | 10 V |
Qualification: | Not Qualified |
Additional Features: | LOW NOISE |
Maximum Drain Current (Abs) (ID): | .04 A |
Peak Reflow Temperature (C): | 260 |