Infineon Technologies - BFY640-04(ES)

  1. Home
  2. Infineon Technologies - BFY640-04(ES)
BFY640-04(ES) by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BFY640-04(ES)
Description RF Small Signal Bipolar Transistors;
Datasheet BFY640-04(ES) Datasheet
In Stock863
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
863 - -

Popular Products

Category Top Products

START405 by STMicroelectronics

START405

STMicroelectronics

START405 by STMicroelectronics is an NPN RF BJT designed for amplifier applications, featuring a max power dissipation of 0.045 W and a nominal transition frequency of 42 GHz. It operates in the C band with a compact surface mount package. Ideal for high-frequency circuits, it supports up to 150 °C.
KSC1674Y by Onsemi

KSC1674Y

Onsemi

KSC1674Y by Onsemi is an NPN BJT transistor with max VCEsat of 0.3V, hFE of 120, and fT of 600MHz. Ideal for amplifier applications in the ultra-high frequency band due to its low power dissipation and high transition frequency. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
MMPQ2369R2G by Onsemi

MMPQ2369R2G

Onsemi

The Onsemi MMPQ2369R2G is a NPN RF BJT with 4 elements, suitable for switching applications. It has a max collector-emitter voltage of 15V, max operating temp of 150 °C, and fT of 550MHz. This transistor comes in a small outline package with Gull Wing terminals for surface mount assembly.
KSC2223O by Onsemi

KSC2223O

Onsemi

KSC2223O by Onsemi is an NPN BJT transistor with a max VCEsat of 0.3V, ideal for amplifier applications in the very high frequency band. It has a min hFE of 60, operates b/w -55 to 150 °C, and can handle a max IC of 0.02A in a small outline package style.
BFP420H6327XTSA1 by Infineon Technologies

BFP420H6327XTSA1

Infineon Technologies

Infineon's BFP420H6327XTSA1 is an NPN RF BJT transistor with a max fT of 25 GHz. It is ideal for X Band applications, featuring a max VCE of 4.5V and IC of 0.035A. The transistor operates in temperatures as low as -65°C and complies with AEC-Q101 standards.
BFG35,115 by NXP Semiconductors

BFG35,115

NXP Semiconductors

NXP Semiconductors' BFG35,115 is a NPN RF BJT transistor with 4 terminals. It operates in the ultra-high frequency band up to 4000 MHz and has a max power dissipation of 1W. Ideal for amplifier applications, this transistor features a small outline package with Gull Wing terminals for surface mounting.
SD1012-3 by STMicroelectronics

SD1012-3

STMicroelectronics

NPN; Surface Mount: NO; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Transistor Element Material: SILICON;
TIS86 by Texas Instruments

TIS86

Texas Instruments

TIS86 by Texas Instruments is a NPN BJT transistor with 3 terminals, ideal for amplifier applications in the very high frequency band. It has a max power dissipation of 0.4W, DC current gain of 40, and operates at temperatures up to 150°C. The package style is cylindrical with a round shape and wire terminals.
MPSH10 by NXP Semiconductors

MPSH10

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .04 A; Transistor Application: SWITCHING;
BLW32 by New Jersey Semiconductor Products

BLW32

New Jersey Semiconductor Products

NPN; Nominal Transition Frequency (fT): 3500 MHz; Maximum Collector Current (IC): .65 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 30 V; No. of Elements: 1;
HFA3102BZ96 by Intersil

HFA3102BZ96

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Maximum Time At Peak Reflow Temperature (s): 30;
SD1438 by STMicroelectronics

SD1438

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb);
BLW32 by Asi Semiconductor

BLW32

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): 1 A; Transistor Application: AMPLIFIER;
2N3643 by Space Power Electronics

2N3643

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;
MRF559 by Microsemi

MRF559

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .15 A; Terminal Finish: TIN LEAD;
934067694115 by NXP Semiconductors

934067694115

NXP Semiconductors

RF Small Signal Bipolar Transistors;
CA3086M96 by Renesas Electronics

CA3086M96

Renesas Electronics

CA3086M96 by Renesas Electronics is a NPN BJT transistor with 6 elements and 14 terminals. It operates in the very high frequency band up to 550 MHz, making it ideal for amplifier applications. This complex transistor has a max collector-emitter voltage of 15V and collector current of 0.05A, suitable for surface mount configurations in small outline packages.
BFQ256A-T by NXP Semiconductors

BFQ256A-T

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): .3 A; Additional Features: HIGH RELIABILITY;
NESG260234-T1-AZ by Nec Electronics

NESG260234-T1-AZ

Nec Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Package Style (Meter): SMALL OUTLINE; JESD-609 Code: e6;
HFA3127BZ96 by Integrated Device Technology

HFA3127BZ96

Integrated Device Technology

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Time At Peak Reflow Temperature (s): 30;