BSC072N03LDGATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSC072N03LDGATMA1
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
Datasheet	BSC072N03LDGATMA1 Datasheet
In Stock	4,420

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	11.5 A
Maximum Pulsed Drain Current (IDM):	80 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0094 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	90 mJ
Other Names:	BSC072N03LD G-ND SP000359607 BSC072N03LD GTR BSC072N03LDGATMA1TR BSC072N03LD GCT-ND BSC072N03LD GCT 2156-BSC072N03LDGATMA1TR BSC072N03LD G BSC072N03LD GTR-ND BSC072N03LDG BSC072N03LDGATMA1CT BSC072N03LDGATMA1DKR BSC072N03LD GDKR-ND BSC072N03LD GDKR
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,420	-	-

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