Infineon Technologies - BSM75GB120D

BSM75GB120D by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSM75GB120D
Description	Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 75 A; Maximum Collector-Emitter Voltage: 1200 V; No. of Elements: 1; Maximum VCEsat: 2.8 V;
Datasheet	BSM75GB120D Datasheet
In Stock	392

BSM75GB120D Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	75 A
Maximum Power Dissipation (Abs):	625 W
Maximum Collector-Emitter Voltage:	1200 V
No. of Elements:	1
Sub-Category:	Insulated Gate BIP Transistors
Maximum VCEsat:	2.8 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
392	-	-

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