Infineon Technologies - BSO207PHXUMA1

BSO207PHXUMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSO207PHXUMA1
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 3; Maximum Drain-Source On Resistance: .045 ohm; Terminal Position: DUAL;
Datasheet BSO207PHXUMA1 Datasheet
In Stock2,289
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 44 mJ
Other Names: ROCINFBSO207PHXUMA1
BSO207P HDKR-ND
2156-BSO207PHXUMA1
BSO207PHXUMA1DKR
BSO207PH
BSO207PHXUMA1TR
BSO207P HCT-ND
BSO207P HTR-ND
SP000613832
BSO207P HCT
BSO207P H-ND
BSO207PHXUMA1CT
BSO207P H
BSO207P HDKR
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 5 A
Maximum Pulsed Drain Current (IDM): 22.8 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 8
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .045 ohm
Moisture Sensitivity Level (MSL): 3
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Pricing (USD)

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