Infineon Technologies - BSP298H6327

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BSP298H6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSP298H6327
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;
Datasheet BSP298H6327 Datasheet
In Stock294
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .5 A
Maximum Pulsed Drain Current (IDM): 2 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): 1.8 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 3 ohm
Avalanche Energy Rating (EAS): 130 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 400 V
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): .5 A
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