Infineon Technologies - BSP299

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BSP299 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSP299
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; No. of Elements: 1; Transistor Element Material: SILICON;
Datasheet BSP299 Datasheet
In Stock784
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .4 A
Maximum Pulsed Drain Current (IDM): 1.6 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 4
Maximum Power Dissipation (Abs): 1.8 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 4 ohm
Moisture Sensitivity Level (MSL): 3
Avalanche Energy Rating (EAS): 130 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): .4 A
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