Infineon Technologies - BSZ0909NSATMA1

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BSZ0909NSATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSZ0909NSATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Maximum Drain-Source On Resistance: .012 ohm; No. of Terminals: 8;
Datasheet BSZ0909NSATMA1 Datasheet
In Stock562
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 36 A
Maximum Pulsed Drain Current (IDM): 144 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 25 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .012 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 9 mJ
Other Names: BSZ0909NSDKR-ND
BSZ0909NSCT
BSZ0909NSCT-ND
2156-BSZ0909NSATMA1TR
SP000832568
BSZ0909NSDKR
BSZ0909NS
BSZ0909NSTR-ND
BSZ0909NSATMA1TR
BSZ0909NS-ND
BSZ0909NSATMA1CT
BSZ0909NSATMA1DKR
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 34 V
Qualification: Not Qualified
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Pricing (USD)

Qty. Unit Price Ext. Price
562 $0.180 $101.160

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