Infineon Technologies - BSZ130N03LSGATMA1

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BSZ130N03LSGATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSZ130N03LSGATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Terminal Position: DUAL; Package Shape: SQUARE;
Datasheet BSZ130N03LSGATMA1 Datasheet
In Stock50,604
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 28 A
Maximum Pulsed Drain Current (IDM): 140 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 25 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .013 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 9 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID): 35 A
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