Infineon Technologies - DDB6U50N08XR

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DDB6U50N08XR by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number DDB6U50N08XR
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1;
Datasheet DDB6U50N08XR Datasheet
In Stock150
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 30 A
Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
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