Infineon Technologies - DF100R07W1H5FP_B54

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DF100R07W1H5FP_B54 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number DF100R07W1H5FP_B54
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet DF100R07W1H5FP_B54 Datasheet
In Stock764
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 40 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 4.75 V
Surface Mount: NO
Nominal Turn Off Time (toff): 30 ns
No. of Terminals: 14
Terminal Position: UPPER
Nominal Turn On Time (ton): 12.6 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X14
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Voltage: 20 V
Reference Standard: IEC-61140
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 1.55 V
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