F4-75R07W2H3_B51 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	F4-75R07W2H3_B51
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 75 A; Case Connection: ISOLATED;
Datasheet	F4-75R07W2H3_B51 Datasheet
In Stock	549

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	75 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	300 ns
No. of Terminals:	18
Maximum Power Dissipation (Abs):	250 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	45 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X18
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	650 V
Maximum Gate-Emitter Voltage:	20 V
Reference Standard:	UL APPROVED
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	1.55 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
549	-	-

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;

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RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

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