Infineon Technologies - FB15R06W1E3ENG

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FB15R06W1E3ENG by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FB15R06W1E3ENG
Description N-Channel; Maximum Power Dissipation (Abs): 81 W; Maximum Collector Current (IC): 24 A; Nominal Turn On Time (ton): 29 ns; Case Connection: ISOLATED; Maximum VCEsat: 2 V;
Datasheet FB15R06W1E3ENG Datasheet
In Stock913
NAME DESCRIPTION
Maximum Collector Current (IC): 24 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 260 ns
Maximum Power Dissipation (Abs): 81 W
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 29 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 2 V
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