FD1200R17HP4KB2BOSA2 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FD1200R17HP4KB2BOSA2
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 6500 W; Maximum Gate-Emitter Voltage: 20 V; Maximum Gate-Emitter Threshold Voltage: 6.4 V;
Datasheet	FD1200R17HP4KB2BOSA2 Datasheet
In Stock	373

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.4 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	1800 ns
No. of Terminals:	7
Maximum Power Dissipation (Abs):	6500 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	900 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-X7
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Moisture Sensitivity Level (MSL):	1
Other Names:	448-FD1200R17HP4KB2BOSA2 SP001051988 FD1200R17HP4KB2 FD1200R17HP4KB2BOSA2-ND
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	1700 V
Maximum Gate-Emitter Voltage:	20 V
Reference Standard:	UL APPROVED
Maximum VCEsat:	2.25 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
373	$1,040.100	$387,957.300

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