FD200R12KE3HOSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FD200R12KE3HOSA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 295 A; Qualification: Not Qualified; JESD-30 Code: R-XUFM-X5;
Datasheet	FD200R12KE3HOSA1 Datasheet
In Stock	10

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	295 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Nominal Turn Off Time (toff):	830 ns
No. of Terminals:	5
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1200 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	400 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
10	-	-

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