Infineon Technologies - FF1200R17KE3

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FF1200R17KE3 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF1200R17KE3
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5950 W; Maximum Collector Current (IC): 1600 A; Maximum Gate-Emitter Voltage: 20 V;
Datasheet FF1200R17KE3 Datasheet
In Stock665
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 1600 A
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 2100 ns
No. of Terminals: 10
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 5950 W
Maximum Collector-Emitter Voltage: 1700 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 1050 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X10
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 2.45 V
Moisture Sensitivity Level (MSL): 1
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