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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | FF6MR12W2M1_B70 |
Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Case Connection: ISOLATED; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON CARBIDE; |
Datasheet | FF6MR12W2M1_B70 Datasheet |
In Stock | 121 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Configuration: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
Transistor Element Material: | SILICON CARBIDE |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Turn On Time (ton): | 39.1 ns |
Maximum Drain Current (ID): | 200 A |
Maximum Pulsed Drain Current (IDM): | 400 A |
Surface Mount: | NO |
No. of Terminals: | 35 |
Terminal Position: | UPPER |
Package Style (Meter): | FLANGE MOUNT |
Maximum Turn Off Time (toff): | 92.6 ns |
JESD-30 Code: | R-XUFM-X35 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Maximum Drain-Source On Resistance: | .00563 ohm |
Maximum Feedback Capacitance (Crss): | 112 pF |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -40 Cel |
Minimum DS Breakdown Voltage: | 1200 V |
Reference Standard: | UL RECOGNIZED |