Infineon Technologies - FF6MR12W2M1_B70

FF6MR12W2M1_B70 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FF6MR12W2M1_B70
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Case Connection: ISOLATED; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON CARBIDE;
Datasheet FF6MR12W2M1_B70 Datasheet
In Stock121
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 39.1 ns
Maximum Drain Current (ID): 200 A
Maximum Pulsed Drain Current (IDM): 400 A
Surface Mount: NO
No. of Terminals: 35
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 92.6 ns
JESD-30 Code: R-XUFM-X35
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .00563 ohm
Maximum Feedback Capacitance (Crss): 112 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 1200 V
Reference Standard: UL RECOGNIZED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
121 - -

Popular Products

Category Top Products