FF8MR12W2M1_B11 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FF8MR12W2M1_B11
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum Operating Temperature: -40 Cel; Transistor Application: SWITCHING;
Datasheet	FF8MR12W2M1_B11 Datasheet
In Stock	326

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Pulsed Drain Current (IDM):	300 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
No. of Terminals:	35
Minimum DS Breakdown Voltage:	1200 V
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X35
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
326	-	-

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