FF900R12IE4TBOSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FF900R12IE4TBOSA1
Description	Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 5100 W; Maximum Collector Current (IC): 900 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet	FF900R12IE4TBOSA1 Datasheet
In Stock	190

NAME	DESCRIPTION
Maximum Collector Current (IC):	900 A
Maximum Power Dissipation (Abs):	5100 W
Maximum Collector-Emitter Voltage:	1200 V
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
No. of Elements:	1
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.05 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
190	-	-

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Transistor Application: SWITCHING; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR;