Infineon Technologies - FP150R12N3T7_B11

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FP150R12N3T7_B11 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FP150R12N3T7_B11
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Maximum Gate-Emitter Threshold Voltage: 6.45 V; No. of Elements: 7;
Datasheet FP150R12N3T7_B11 Datasheet
In Stock38
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 150 A
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.45 V
Surface Mount: NO
Nominal Turn Off Time (toff): 434 ns
No. of Terminals: 43
Terminal Position: UPPER
Nominal Turn On Time (ton): 244 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X43
No. of Elements: 7
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 1200 V
Additional Features: UL RECOGNIZED
Maximum Gate-Emitter Voltage: 20 V
Reference Standard: IEC-60747; IEC-60749; IEC-60068; IEC-61140
Maximum VCEsat: 1.8 V
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