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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | FP35R12W2T4P_B11 |
Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Transistor Application: POWER CONTROL; Maximum Operating Temperature: 150 Cel; Package Body Material: UNSPECIFIED; |
Datasheet | FP35R12W2T4P_B11 Datasheet |
In Stock | 629 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | COMPLEX |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Maximum Gate-Emitter Threshold Voltage: | 6.4 V |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
Minimum Operating Temperature: | -40 Cel |
Nominal Turn Off Time (toff): | 510 ns |
No. of Terminals: | 35 |
Maximum Collector-Emitter Voltage: | 1200 V |
Terminal Position: | UPPER |
Nominal Turn On Time (ton): | 43 ns |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X35 |
No. of Elements: | 7 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Maximum Operating Temperature: | 150 Cel |
Maximum Gate-Emitter Voltage: | 20 V |
Case Connection: | ISOLATED |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum VCEsat: | 2.25 V |