FS150R07N3E4_B11 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FS150R07N3E4_B11
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 430 W; Maximum Collector Current (IC): 150 A; No. of Terminals: 35;
Datasheet	FS150R07N3E4_B11 Datasheet
In Stock	300

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	150 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Nominal Turn Off Time (toff):	450 ns
No. of Terminals:	35
Maximum Power Dissipation (Abs):	430 W
Maximum Collector-Emitter Voltage:	650 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	180 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X35
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	1.95 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
300	$181.640	$54,492.000

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