Infineon Technologies - FZ1200R17HE4NPSA1

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FZ1200R17HE4NPSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ1200R17HE4NPSA1
Description N-Channel; Maximum Power Dissipation (Abs): 7800 W; Nominal Turn On Time (ton): 955 ns; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 20 V; Case Connection: ISOLATED;
Datasheet FZ1200R17HE4NPSA1 Datasheet
In Stock353
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 1760 ns
Maximum Power Dissipation (Abs): 7800 W
Maximum Collector-Emitter Voltage: 1700 V
Nominal Turn On Time (ton): 955 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.3 V
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