Infineon Technologies - G300HHCK12P2

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G300HHCK12P2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number G300HHCK12P2
Description Insulated Gate Bipolar Transistors; Maximum Collector Current (IC): 450 A; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 2.7 V; Maximum Collector-Emitter Voltage: 1200 V; No. of Elements: 1;
Datasheet G300HHCK12P2 Datasheet
In Stock494
NAME DESCRIPTION
Maximum Collector Current (IC): 450 A
Maximum Collector-Emitter Voltage: 1200 V
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.7 V
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