Infineon Technologies - IAUC28N08S5L230ATMA1

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IAUC28N08S5L230ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IAUC28N08S5L230ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; JESD-609 Code: e3; Minimum Operating Temperature: -55 Cel;
Datasheet IAUC28N08S5L230ATMA1 Datasheet
In Stock312
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 28 A
Maximum Pulsed Drain Current (IDM): 112 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 38 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .028 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 28 mJ
Other Names: 448-IAUC28N08S5L230ATMA1CT
448-IAUC28N08S5L230ATMA1DKR
SP002669400
448-IAUC28N08S5L230ATMA1TR
Maximum Feedback Capacitance (Crss): 14 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 80 V
Reference Standard: AEC-Q101
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Pricing (USD)

Qty. Unit Price Ext. Price
312 $0.286 $89.232

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