Infineon Technologies - IGA03N120H2(P-TO-220-3-31)

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IGA03N120H2(P-TO-220-3-31) by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IGA03N120H2(P-TO-220-3-31)
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 3 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet IGA03N120H2(P-TO-220-3-31) Datasheet
In Stock293
NAME DESCRIPTION
Maximum Collector Current (IC): 3 A
Maximum Power Dissipation (Abs): 29 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Threshold Voltage: 3.9 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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