Infineon Technologies - IHW40T60

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IHW40T60 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IHW40T60
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 303 W; Maximum Collector Current (IC): 80 A; No. of Elements: 1;
Datasheet IHW40T60 Datasheet
In Stock538
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 80 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5.7 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 272.5 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 303 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
JEDEC-95 Code: TO-247AD
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
538 $2.490 $1,339.620

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