Infineon Technologies - IKW15N120BH6XKSA1

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IKW15N120BH6XKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IKW15N120BH6XKSA1
Description N-Channel; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 30 A; Nominal Turn On Time (ton): 46 ns; Maximum Gate-Emitter Voltage: 20 V; Maximum Gate-Emitter Threshold Voltage: 6.3 V;
Datasheet IKW15N120BH6XKSA1 Datasheet
In Stock30
NAME DESCRIPTION
Other Names: SP001666618
448-IKW15N120BH6XKSA1
2156-IKW15N120BH6XKSA1
IKW15N120BH6XKSA1-ND
Maximum Collector Current (IC): 30 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.3 V
Polarity or Channel Type: N-Channel
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 373 ns
Maximum Power Dissipation (Abs): 200 W
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): 46 ns
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.3 V
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