IPB180P04P4-03 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPB180P04P4-03
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 175 Cel;
Datasheet	IPB180P04P4-03 Datasheet
In Stock	599

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	180 A
Maximum Pulsed Drain Current (IDM):	720 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	6
Maximum Power Dissipation (Abs):	150 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0028 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	90 mJ
JEDEC-95 Code:	TO-263
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	40 V
Maximum Drain Current (Abs) (ID):	180 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
599	$2.380	$1,425.620

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