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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IPD09N03LAG |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; |
| Datasheet | IPD09N03LAG Datasheet |
| In Stock | 387 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 50 A |
| Maximum Pulsed Drain Current (IDM): | 350 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 63 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0148 ohm |
| Moisture Sensitivity Level (MSL): | 3 |
| Avalanche Energy Rating (EAS): | 75 mJ |
| Other Names: |
IPD09N03LAGXTINTR-ND IPD09N03LAGINTR IPD09N03LAGINTR-NDR IPD09N03LAINCT IPD09N03LAINCT-ND IPD09N03LAGBUMA1 IPD09N03LAG IPD09N03LAGXTINCT IPD09N03LAGXTINTR IPD09N03LAINTR SP000017536 IPD09N03LA IPD09N03LAGINCT IPD09N03LAINTR-ND IPD09N03LAGXTINCT-ND IPD09N03LAGXT IPD09N03LAGINCT-NDR |
| JEDEC-95 Code: | TO-252AA |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 25 V |
| Qualification: | Not Qualified |
| Additional Features: | LOGIC LEVEL COMPATIBLE |
| Maximum Drain Current (Abs) (ID): | 50 A |
| Peak Reflow Temperature (C): | 260 |
