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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IPD110N12N3GBUMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; No. of Terminals: 2; Avalanche Energy Rating (EAS): 120 mJ; |
| Datasheet | IPD110N12N3GBUMA1 Datasheet |
| In Stock | 759 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 75 A |
| Maximum Pulsed Drain Current (IDM): | 300 A |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 136 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .011 ohm |
| Avalanche Energy Rating (EAS): | 120 mJ |
| Other Names: |
IPD110N12N3 G IPD110N12N3G SP000674466 IPD110N12N3 GCT IFEINFIPD110N12N3GBUMA1 IPD110N12N3 GTR-ND IPD110N12N3 GCT-ND IPD110N12N3GBUMA1CT IPD110N12N3GBUMA1DKR IPD110N12N3 GDKR 2156-IPD110N12N3GBUMA1 IPD110N12N3 G-ND IPD110N12N3 GDKR-ND 2156-IPD110N12N3GBUMA1-ITTR-ND IPD110N12N3 GTR IPD110N12N3GBUMA1TR |
| JEDEC-95 Code: | TO-252 |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 120 V |
| Qualification: | Not Qualified |
