Infineon Technologies - IPD50R2K0CEBTMA1

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IPD50R2K0CEBTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD50R2K0CEBTMA1
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 22 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet IPD50R2K0CEBTMA1 Datasheet
In Stock863
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 22 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 2.4 A
Maximum Drain Current (Abs) (ID): 2.4 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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Pricing (USD)

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863 $1.000 $863.000

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