Infineon Technologies - IPD90P03P4L04ATMA1

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IPD90P03P4L04ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD90P03P4L04ATMA1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 360 A; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 2;
Datasheet IPD90P03P4L04ATMA1 Datasheet
In Stock6,537
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 370 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 90 A
JEDEC-95 Code: TO-252
Maximum Pulsed Drain Current (IDM): 360 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 30 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Reference Standard: AEC-Q101
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0068 ohm
Moisture Sensitivity Level (MSL): 1
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