Infineon Technologies - IPL65R195C7AUMA1

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IPL65R195C7AUMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPL65R195C7AUMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; JESD-609 Code: e3; JESD-30 Code: S-PSSO-N4;
Datasheet IPL65R195C7AUMA1 Datasheet
In Stock2,057
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 49 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PSSO-N4
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .195 ohm
Moisture Sensitivity Level (MSL): 2A
Avalanche Energy Rating (EAS): 57 mJ
Other Names: IPL65R195C7AUMA1-ND
INFINFIPL65R195C7AUMA1
448-IPL65R195C7AUMA1DKR
2156-IPL65R195C7AUMA1
SP001032726
448-IPL65R195C7AUMA1CT
448-IPL65R195C7AUMA1TR
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 650 V
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