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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IPLU300N04S4R8XTMA1 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 429 W; No. of Elements: 1; Avalanche Energy Rating (EAS): 750 mJ; |
Datasheet | IPLU300N04S4R8XTMA1 Datasheet |
In Stock | 260,358 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Turn On Time (ton): | 72 ns |
Maximum Drain Current (ID): | 300 A |
Maximum Pulsed Drain Current (IDM): | 1200 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
Terminal Finish: | TIN |
No. of Terminals: | 2 |
Maximum Power Dissipation (Abs): | 429 W |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
Maximum Turn Off Time (toff): | 129 ns |
JESD-30 Code: | R-PSSO-F2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .00077 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 750 mJ |
Maximum Feedback Capacitance (Crss): | 300 pF |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 40 V |
Additional Features: | ULTRA-LOW RESISTANCE |
Reference Standard: | AEC-Q101 |
Maximum Drain Current (Abs) (ID): | 35 A |