Infineon Technologies - IPN60R360P7S

IPN60R360P7S by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPN60R360P7S
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 7 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;
Datasheet IPN60R360P7S Datasheet
In Stock533
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9 A
Maximum Pulsed Drain Current (IDM): 26 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 7 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .36 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 27 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 650 V
Maximum Drain Current (Abs) (ID): 9 A
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Pricing (USD)

Qty. Unit Price Ext. Price
533 $0.683 $364.039

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