IPP80N06S2L-11 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPP80N06S2L-11
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 158 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): FLANGE MOUNT;
Datasheet	IPP80N06S2L-11 Datasheet
In Stock	115

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	80 A
Maximum Pulsed Drain Current (IDM):	320 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	158 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.0147 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	280 mJ
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	55 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Maximum Drain Current (Abs) (ID):	80 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
115	-	-

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