Infineon Technologies - IRF5N5210SCS

IRF5N5210SCS by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF5N5210SCS
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN; No. of Terminals: 3;
Datasheet IRF5N5210SCS Datasheet
In Stock385
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 340 mJ
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 31 A
Maximum Pulsed Drain Current (IDM): 124 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 100 V
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .06 ohm
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Pricing (USD)

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