IRF5N5210SCS by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRF5N5210SCS
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN; No. of Terminals: 3;
Datasheet	IRF5N5210SCS Datasheet
In Stock	385

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	340 mJ
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	31 A
Maximum Pulsed Drain Current (IDM):	124 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	100 V
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-XBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.06 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
385	-	-

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Transistor Application: SWITCHING; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

KEMET C0603C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.

RECTIFIER DIODE; Surface Mount: NO; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 175 Cel; JESD-609 Code: e3; No. of Elements: 1;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;