Infineon Technologies - IRF630NPBF

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IRF630NPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF630NPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 82 W; Maximum Operating Temperature: 175 Cel; Avalanche Energy Rating (EAS): 94 mJ;
Datasheet IRF630NPBF Datasheet
In Stock30,085
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9.3 A
Maximum Pulsed Drain Current (IDM): 37 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 82 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .3 ohm
Avalanche Energy Rating (EAS): 94 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Maximum Drain Current (Abs) (ID): 9.3 A
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