Infineon Technologies - IRF6622TRPBF

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IRF6622TRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF6622TRPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 34 W; Terminal Position: BOTTOM; Minimum DS Breakdown Voltage: 25 V;
Datasheet IRF6622TRPBF Datasheet
In Stock155
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 15 A
Maximum Pulsed Drain Current (IDM): 120 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): 34 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0063 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 13 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 25 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 59 A
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