Infineon Technologies - IRF9910PBF

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IRF9910PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF9910PBF
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Terminals: 8; Package Shape: RECTANGULAR;
Datasheet IRF9910PBF Datasheet
In Stock38,973
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 26 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 12 A
JEDEC-95 Code: MS-012AA
Maximum Pulsed Drain Current (IDM): 98 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .0093 ohm
Moisture Sensitivity Level (MSL): 1
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