Infineon Technologies - IRFE310

IRFE310 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFE310
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 11 W; Additional Features: HIGH RELIABILITY; Terminal Finish: TIN LEAD;
Datasheet IRFE310 Datasheet
In Stock705
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.2 A
Maximum Pulsed Drain Current (IDM): 4.8 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 18
Maximum Power Dissipation (Abs): 11 W
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-CQCC-N18
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Maximum Drain-Source On Resistance: 3.6 ohm
Avalanche Energy Rating (EAS): .82 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 400 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
Maximum Drain Current (Abs) (ID): 1.2 A
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