Infineon Technologies - IRG5K50PM06E

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IRG5K50PM06E by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG5K50PM06E
Description N-Channel; Maximum Collector Current (IC): 50 A; Maximum Gate-Emitter Threshold Voltage: 5.5 V; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 2.1 V; Maximum Collector-Emitter Voltage: 600 V;
Datasheet IRG5K50PM06E Datasheet
In Stock87
NAME DESCRIPTION
Nominal Turn Off Time (toff): 220 ns
Maximum Collector Current (IC): 50 A
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 80000 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.1 V
Minimum Operating Temperature: -40 Cel
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