Infineon Technologies - IRG7CH81K10EF-R

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IRG7CH81K10EF-R by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG7CH81K10EF-R
Description N-CHANNEL; Maximum Collector Current (IC): 150 A; Maximum Gate-Emitter Threshold Voltage: 7.5 V; Maximum Gate-Emitter Voltage: 30 V; Maximum Operating Temperature: 175 Cel; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet IRG7CH81K10EF-R Datasheet
In Stock249
NAME DESCRIPTION
Maximum Collector Current (IC): 150 A
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Threshold Voltage: 7.5 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 30 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
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