Infineon Technologies - IRG7PH35U-EP

FGA25N120ANTDTU-F109 by Onsemi is an N-CHANNEL IGBT with 90 ns rise time, 180 ns fall time, and 312 W power dissipation. Ideal for high-power applications requiring a max collector-emitter voltage of 1200 V and a collector current of 50 A. Operating temperature up to 150°C makes it suitable for industrial use.

STGE200NB60S by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 200A IC, and 1.6V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 600W and operates up to 150°C.

APT150GN60JDQ4 by Microchip Technology is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 30V. It has a nominal turn-off time of 575ns, making it ideal for power control applications requiring high current handling capabilities up to 220A. The transistor's package style is flange mount, and it is UL recognized for reliable performance in various industrial settings.

Infineon Technologies' FP10R06W1E3BOMA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 600V, and max. current of 16A. Ideal for power control applications due to its fast turn on/off times (ton: 26ns, toff: 260ns) and operating temp up to 175°C in a rectangular package style.

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 2300 W; Maximum Collector Current (IC): 510 A; Terminal Finish: Matte Tin (Sn); Maximum Gate-Emitter Threshold Voltage: 5.5 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 34 W; Maximum Collector Current (IC): 11.5 A; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Case Connection: ISOLATED; Transistor Element Material: SILICON;

IGB50N60TXT by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it ideal for power control applications. This insulated gate bipolar transistor comes in a surface-mount package with GULL WING terminals, suitable for high-power electronic systems operating at temperatures up to 175°C.

F4-75R06W1E3 by Infineon Technologies is an N-CHANNEL IGBT with 600V VCEsat, 100A IC, and 275W power dissipation. Ideal for POWER CONTROL applications due to its fast ton of 45ns and low toff of 330ns. The COMPLEX configuration and RECTANGULAR package make it suitable for high-power systems requiring efficient switching capabilities.

APT75GP120J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 128A. It has a nominal turn-off time of 359ns and turn-on time of 60ns, making it ideal for power control applications requiring fast switching speeds. The transistor comes in a rectangular package style with flange mount, suitable for high-power applications where efficient power management is crucial.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1700 V;

STGW30NC60WD by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 200W Ptot. Ideal for power control applications, it features a single configuration with built-in diode and a turn-off time of 189ns. The package style is flange mount with through-hole terminals.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 454 W; Maximum Collector Current (IC): 140 A; Transistor Application: POWER CONTROL;

NGTB40N120S3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 160A IC, and 1.95V VCEsat. Ideal for POWER CONTROL applications due to its high power dissipation of 454W and operating temperature range of -55 to 175°C. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.

IXXH30N65B4 by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 230W power dissipation. Ideal for POWER CONTROL applications, it has a fast turn-off time of 206ns and low VCEsat of 2.1V. The package style is FLANGE MOUNT with a RECTANGULAR shape and THROUGH-HOLE terminals.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1040 W; Maximum Collector Current (IC): 200 A; JESD-30 Code: R-PSIP-T3;

IKQ75N120CT2XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with VCEsat of 2.15V and IC of 150A. Ideal for POWER CONTROL applications, it has a max VCE of 1200V and can operate b/w -40 to 175 °C.

STGW25H120DF2 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.6V and a max collector-emitter voltage of 1200V. It is used for power control applications, with a nominal turn off time of 339ns.

The Onsemi FGHL50T65SQ is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and IC of 100A, ideal for POWER CONTROL applications. It has a max VCE of 650V, operating temperature range from -55 to 175°C, and comes in a RECTANGULAR package style for FLANGE MOUNT installation.

FF900R12IP4DVBOSA1 by Infineon is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 1300 ns turn off time, and 1200 V max collector-emitter voltage. It is used in applications requiring high power switching such as motor drives and renewable energy systems.