Infineon Technologies - IRG7U75HF12A

  1. Home
  2. Infineon Technologies - IRG7U75HF12A
IRG7U75HF12A by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IRG7U75HF12A
Description N-Channel; Maximum Collector Current (IC): 75 A; Case Connection: ISOLATED; Maximum Gate-Emitter Threshold Voltage: 4.9 V; Maximum VCEsat: 2 V; Nominal Turn On Time (ton): 130000 ns;
Datasheet IRG7U75HF12A Datasheet
In Stock780
NAME DESCRIPTION
Nominal Turn Off Time (toff): 1075 ns
Maximum Collector Current (IC): 75 A
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): 130000 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 4.9 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2 V
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
780 - -

Popular Products

Category Top Products

FF450R17ME4BOSA1 by Infineon Technologies

FF450R17ME4BOSA1

Infineon Technologies

FF450R17ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1700V, max current of 600A, and turn off time of 1600ns. Ideal for power control applications due to its high operating temperature of 175°C and fast turn on time of 380ns.
IKW75N60H3FKSA1 by Infineon Technologies

IKW75N60H3FKSA1

Infineon Technologies

IKW75N60H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 600V VCE, 80A IC. It is a single configuration transistor with built-in diode for power control applications. The package style is flange mount with plastic/epoxy body material and through-hole terminals.
FGB20N60SFD-F085 by Onsemi

FGB20N60SFD-F085

Onsemi

FGB20N60SFD-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 208W Ptot. Ideal for power control applications due to its fast tr of 21ns and tf of 43ns. AEC-Q101 certified for automotive use, it features a small outline package style.
IRGB4061DPBF by International Rectifier

IRGB4061DPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 206 W; Maximum Collector Current (IC): 36 A; Qualification: Not Qualified;
FGL60N100BNTD by Fairchild Semiconductor

FGL60N100BNTD

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 60 A; Terminal Finish: MATTE TIN;
CM400DY-24NF by Powerex

CM400DY-24NF

Powerex

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 400 A; Terminal Position: UPPER; Maximum Collector-Emitter Voltage: 1200 V;
IRG4PC50FDPBF by Infineon Technologies

IRG4PC50FDPBF

Infineon Technologies

IRG4PC50FDPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 200W. It has a single configuration with built-in diode, suitable for power control applications. With a nominal turn-off time of 660ns and max fall time of 210ns, it offers efficient switching performance in high-power systems.
BSM150GT120DN2 by Siemens

BSM150GT120DN2

Siemens

N-CHANNEL; Configuration: 3 BANKS, PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Turn Off Time (toff): 900 ns;
IKW40N65F5FKSA1 by Infineon Technologies

IKW40N65F5FKSA1

Infineon Technologies

IKW40N65F5FKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 200ns and high operating temperature range (-40 to 175°C). Package style: FLANGE MOUNT.
IRG4PSH71KDPBF by International Rectifier

IRG4PSH71KDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 78 A; Maximum Operating Temperature: 150 Cel;
IGW50N60TP by Infineon Technologies

IGW50N60TP

Infineon Technologies

IGW50N60TP by Infineon Technologies is an N-CHANNEL IGBT transistor with a max VCEsat of 1.8V and a max IC of 80A. It is designed for power control applications, featuring a nominal toff of 332ns and ton of 55ns. This transistor operates at temperatures ranging from -40°C to 175°C, making it suitable for various industrial power systems.
FGH40T65SPD_F155 by Onsemi

FGH40T65SPD_F155

Onsemi

FGH40T65SPD_F155 by Onsemi is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 267W Ptot. Ideal for power control applications, it features a built-in diode, 56ns toff, and operates up to 175°C.
FS200R07N3E4RBOSA1 by Infineon Technologies

FS200R07N3E4RBOSA1

Infineon Technologies

FS200R07N3E4RBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements, 650V max collector-emitter voltage, and 210ns turn on time. It is used for power control applications due to its complex configuration and flange mount package style.
FGA25N120ANTDTU by Onsemi

FGA25N120ANTDTU

Onsemi

FGA25N120ANTDTU by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 25A IC, and 312W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
ISL9V5036P3-F085 by Onsemi

ISL9V5036P3-F085

Onsemi

ISL9V5036P3-F085 by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 360V and Max Collector Current of 46A. It is designed for POWER CONTROL applications, featuring a built-in diode and resistor in a RECTANGULAR package style. With a Max Power Dissipation of 250W, it operates at temperatures up to 175°C efficiently.
FGH75T65SHDTLN4 by Onsemi

FGH75T65SHDTLN4

Onsemi

FGH75T65SHDTLN4 by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, offering a max power dissipation of 455W and a max operating temperature of 175°C.
FP25R12W2T4BOMA1 by Infineon Technologies

FP25R12W2T4BOMA1

Infineon Technologies

FP25R12W2T4BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max. voltage of 1200V, and max. current of 39A. Ideal for power control applications, it has a turn off time of 685ns and turn on time of 133ns. The package style is flange mount with a rectangular shape and isolated case connection.
HGTG18N120BND by Harris Semiconductor

HGTG18N120BND

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 18 A; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE;
APTGLQ100DA120T1G by Microsemi

APTGLQ100DA120T1G

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Maximum Collector Current (IC): 170 A; Maximum Gate-Emitter Voltage: 20 V;
AUIRGB4062D1 by International Rectifier

AUIRGB4062D1

International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 246 W; Maximum Collector Current (IC): 59 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Fall Time (tf): 40 ns;