Infineon Technologies - IRHG567110SCS

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IRHG567110SCS by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRHG567110SCS
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 100 V; Maximum Drain-Source On Resistance: .29 ohm; Qualification: Not Qualified;
Datasheet IRHG567110SCS Datasheet
In Stock414
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 130 mJ
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.6 A
JEDEC-95 Code: MO-036AB
Maximum Pulsed Drain Current (IDM): 6.4 A
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: NO
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 14
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): IN-LINE
JESD-30 Code: R-CDIP-T14
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .29 ohm
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