Infineon Technologies - IRHN2C50SE

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IRHN2C50SE by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRHN2C50SE
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; JESD-609 Code: e0; Terminal Finish: TIN LEAD;
Datasheet IRHN2C50SE Datasheet
In Stock930
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 10.4 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
Maximum Power Dissipation (Abs): 150 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 10.4 A
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