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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IRHQ6110 |
| Description | N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 9 W; Operating Mode: ENHANCEMENT MODE; Terminal Finish: TIN LEAD; |
| Datasheet | IRHQ6110 Datasheet |
| In Stock | 421 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Configuration: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 3 A |
| Maximum Pulsed Drain Current (IDM): | 12 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 28 |
| Maximum Power Dissipation (Abs): | 9 W |
| Terminal Position: | QUAD |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | S-CQCC-N28 |
| No. of Elements: | 4 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .62 ohm |
| Avalanche Energy Rating (EAS): | 85 mJ |
| Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
| JESD-609 Code: | e0 |
| Minimum DS Breakdown Voltage: | 100 V |
| Qualification: | Not Qualified |
| Additional Features: | HIGH RELIABILITY |
| Maximum Drain Current (Abs) (ID): | 3 A |
